Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• our experimental conditions (i.e., high-temperature annealing of Mn wetting layers). While several works have been published so far on the seeded VLS growth of Mn-rich Ge–Mn NWs [7][39][40] or on the eutectoid growth of Mn-rich MnxGe1−x nanocolumns with strongly inhomogeneous Mn distribution [25], to

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• results, which supports the idea that TERS can be used as a micro/nano-structure characterization technique. Experimental Core–shell SiNWs were synthesized in two steps. At first, SiNWs were grown by utilizing the VLS growth mechanism [13] using dewetted Pt thin films as the growth catalyst [29] at a

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• a GaAsSb NW IR detector (1300 nm), although the responsivity of the GaAsSb NW detector is better [34]. A photodetector based on a single GaAs nanowire with a responsivity of 1.2 mA·W−1 has been recently reported on a nanowire prepared by chemical beam epitaxy (CBE) with a vapor–liquid–solid (VLS

• ) growth procedure [35]. This value is by two orders of magnitude lower than the responsivity of our photodetector. However, one should take into account that it was fabricated with a nanowire that is one order of magnitude thinner than our nanowire prepared by electrochemical etching. The detectivity of

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• of SnO2 QDs was discussed in our earlier report [18]. In the case of VLS growth, a mixture of SnO2 QDs of diameter 2.4 nm and graphite powder (Alfa Aesar, 99.9995%) in a 3:1 weight ratio was placed in a high purity Al2O3 (99.99 %) boat. Au-coated Si (100) was used as the substrate. A Au film of 3 nm

• of 950 °C. The inset in Figure 1a shows a high-resolution image of the smooth, square-shaped NWs. The length and width of the NWs are around 100 µm and 200–250 nm, respectively. A Au nanoparticle appearing as a dark contrast at the tip of the NW supports the VLS growth mechanism [24]. Figure 1b shows

• thermodynamically by considering the Gibbs energy as a measure of structural phase transformation [8]. During VLS growth, the formation of nucleation from the saturated catalyst (Au) is the important step for the shape and structure. As reported earlier, the difference in the Gibbs energy promotes the phase

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• -patterned wafer on which they where localized and contacted by e-beam lithography. The InAs NWs studied were grown in a metal-organic vapor deposition (MOCVD) system by vapor–liquid–solid (VLS) growth using a gold particle as catalyst and using trimethylindium (TMIn) and tert-butylarsine (TBA) as precursors

Investigation of growth dynamics of carbon nanotubes

• Marianna V. Kharlamova

Beilstein J. Nanotechnol. 2017, 8, 826–856, doi:10.3762/bjnano.8.85

• growth of carbon filaments on liquid catalysts [24][25][26]. Later on, the VLS model was applied to describe the growth of MWCNTs [27] and SWCNTs [28][29] on liquid-metal particles. The atomic-level description of the VLS growth process of SWCNTs was performed by molecular dynamics simulations [29][30

• ][31][32]. There are three different steps in the VLS growth mechanism of carbon filaments and nanotubes. In the first step, atomic carbon is provided on the surface of a hot metallic particle by dissociation of adsorbed molecules. In the second step, carbon dissolves into the bulk of the catalyst

• would lead to an unphysically large heat flow [30][32]. Molecular dynamics simulations performed in [30][32] showed that the carbon concentration gradient within the catalytic particle is important for the VLS growth of SWCNTs, whereas the temperature gradient is not necessary. Thermodynamic

Self-assembly of silicon nanowires studied by advanced transmission electron microscopy

• Marta Agati,
• Guillaume Amiard,
• Vincent Le Borgne,
• Paola Castrucci,
• Richard Dolbec,
• Maurizio De Crescenzi,
• My Alì El Khakani and
• Simona Boninelli

Beilstein J. Nanotechnol. 2017, 8, 440–445, doi:10.3762/bjnano.8.47

• , whereas point C indicates the additional presence of iron corresponding to the nanoparticle. In the literature, it has been demonstrated that Fe-catalyzed VLS growth cannot take place under temperatures below 1150 °C [13]. It should be considered that a temperature gradient is generated inside the ICP

Fingerprints of a size-dependent crossover in the dimensionality of electronic conduction in Au-seeded Ge nanowires

• Maria Koleśnik-Gray,
• Gillian Collins,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1574–1578, doi:10.3762/bjnano.7.151

• have quasi one-dimensional character as reflected by the extracted screening lengths. Keywords: electrical transport; germanium nanowires; quasi-1D confinement; screening length; VLS growth; Results and Discussion Synthetic germanium nanowires (Ge NWs) have been proposed as potential next-generation

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• approaches are based on the crystalline growth of nanowires by means of chemical vapour deposition (CVD) techniques. The most common CVD technique for the fabrication of silicon nanowires is the vapor–liquid–solid (VLS) growth [74][75], developed in particular by the group of Lieber at Harvard [76][77][78

• ][79][80], and rapidly diffused and applied by several other groups [81][82][83][84][85]. The VLS growth is based on the catalytic effect of metal (gold or iron) nanoparticles, deposited on a silicon substrate. At high temperatures, an eutectic alloy is formed among metal and Si, supplied by a silane

Integration of ZnO and CuO nanowires into a thermoelectric module

• Dario Zappa,
• Simone Dalola,
• Guido Faglia,
• Elisabetta Comini,
• Matteo Ferroni,
• Caterina Soldano,
• Vittorio Ferrari and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2014, 5, 927–936, doi:10.3762/bjnano.5.106

• crystalline structure. In order to fabricate zinc oxide nanowires, we used thermal evaporation process, which involves both vapour-phase (VP) and vapour-liquid-solid (VLS) growth mechanisms [36][37]. The deposition technique consists of the evaporation of bulk metal oxides powder followed by condensation of

Template based precursor route for the synthesis of CuInSe₂ nanorod arrays for potential solar cell applications

• Mikhail Pashchanka,
• Jonas Bang,
• Niklas S. A. Gora,
• Ildiko Balog,
• Rudolf C. Hoffmann and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2013, 4, 868–874, doi:10.3762/bjnano.4.98

• remains questionable. Earlier, template-based solution precursor routes were demonstrated to be useful as a fully controllable, simple and inexpensive alternative to vacuum techniques that operate in the VLS growth mode. Large arrays of vertically aligned CISe nanowires were fabricated by

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• achieve NWs with tailored properties, namely chemical vapor deposition (CVD) [11], metal–organic CVD [12], molecular-beam epitaxy [13] and laser ablation techniques [14]. In this work we focus on the well-established VLS growth mechanism [15][16], which has shown remarkable potential in the fabrication of

• straight, crystalline, nanometre-sized wires. During VLS growth a Si precursor is introduced, which is cracked and dissolved into the catalytic liquid phase. Generally Au is used as the catalyst on Si substrates, forming a liquid alloy with a eutectic temperature of 364 °C, which, upon supersaturation

Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

• Britta Kämpken,
• Verena Wulf,
• Norbert Auner,
• Marcel Winhold,
• Michael Huth,
• Daniel Rhinow and
• Andreas Terfort

Beilstein J. Nanotechnol. 2012, 3, 535–545, doi:10.3762/bjnano.3.62

• metal [14]. The most frequently used catalytic metal is gold [15] although other metals are known to catalyze the growth of silicon NWs as well [16][17][18]. If gold is used as a catalyst, e.g., by deposition of Au nanoparticles on the substrate, the VLS-growth process is reported to start above the